The effect of non-saturated electron drift velocity on bipolar device linearity

Author

de Vreede, L.C.N. ; de Graaff, H.C. ; Rejeai, B.

Author_Institution

Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands

fYear

2002

fDate

2002

Firstpage

88

Lastpage

91

Abstract

In (H)BJT devices, non-saturated electron drift velocity yields base-collector depletion charge variations which depend on the electric field distribution in the collector. It is demonstrated that these inherently non-linear charge variations limit transistor linearity at higher currents. Consequently, by considering the related partial derivatives (C_bc & τ_col) for different ν_drift (E_field) dependencies, conclusions with respect to device linearity can be made for various material systems.

Keywords

Ge-Si alloys; III-V semiconductors; bipolar transistors; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; BJT devices; GaAs; HBJT devices; SiGe; base-collector depletion charge variations; bipolar device linearity; electric field distribution; nonsaturated electron drift velocity; transistor linearity; Capacitance; Conducting materials; Doping profiles; Electron mobility; Electronic components; Gallium arsenide; Laboratories; Linearity; Poisson equations; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

ISSN

1088-9299

Print_ISBN

0-7803-7561-0

Type

conf

DOI

10.1109/BIPOL.2002.1042893

Filename

1042893