Title :
SiGe HBT self-heating modeling and characterization from AC data
Author :
Shams, Shaikh F. ; McAndrew, Colin C. ; Lim, Ik-sung ; Zlotnicka, Anna
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Abstract :
BJTs are highly sensitive to self-heating, and accurate modeling of BJTs at high bias levels requires electrothermal models. This paper presents a new technique to measure and extract the thermal admittance for BJTs based on AC data and analytic models.
Keywords :
Ge-Si alloys; digital simulation; electric admittance; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; 0 pole model; 2 pole model; AC data; BJT; HBT; SiGe; electrothermal model; self-heating; simulation; thermal admittance; Admittance; Capacitance; Data mining; Electrothermal effects; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Temperature dependence; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042894
