DocumentCode
2385235
Title
Electromagnetic modeling of non-uniform through-silicon via (TSV) interconnections
Author
Xie, Biancun ; Swaminathan, Madhavan
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2012
fDate
13-16 May 2012
Firstpage
43
Lastpage
46
Abstract
In this paper, a hybrid approach for electromagnetic modeling of complex tapered through-silicon via (TSV) in three dimensional integrated circuits (3D ICs) is proposed. For complex TSV structures, TSVs are divided vertically into conical and cylindrical sections. The modeling of conical TSV is presented based on using conical modal basis functions. By using the conical TSV modeling method combined with cylindrical TSV modeling method, complex TSV structures can be modeled efficiently. The accuracy of this hybrid method is validated by comparison with 3-D full-wave simulations.
Keywords
integrated circuit modelling; three-dimensional integrated circuits; 3-D full-wave simulations; conical modal basis functions; cylindrical sections; electromagnetic modeling; hybrid approach; nonuniform through-silicon via interconnections; Computational modeling; Semiconductor device modeling; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Signal and Power Integrity (SPI), 2012 IEEE 16th Workshop on
Conference_Location
Sorrento
Print_ISBN
978-1-4673-1503-6
Type
conf
DOI
10.1109/SaPIW.2012.6222908
Filename
6222908
Link To Document