• DocumentCode
    2385235
  • Title

    Electromagnetic modeling of non-uniform through-silicon via (TSV) interconnections

  • Author

    Xie, Biancun ; Swaminathan, Madhavan

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2012
  • fDate
    13-16 May 2012
  • Firstpage
    43
  • Lastpage
    46
  • Abstract
    In this paper, a hybrid approach for electromagnetic modeling of complex tapered through-silicon via (TSV) in three dimensional integrated circuits (3D ICs) is proposed. For complex TSV structures, TSVs are divided vertically into conical and cylindrical sections. The modeling of conical TSV is presented based on using conical modal basis functions. By using the conical TSV modeling method combined with cylindrical TSV modeling method, complex TSV structures can be modeled efficiently. The accuracy of this hybrid method is validated by comparison with 3-D full-wave simulations.
  • Keywords
    integrated circuit modelling; three-dimensional integrated circuits; 3-D full-wave simulations; conical modal basis functions; cylindrical sections; electromagnetic modeling; hybrid approach; nonuniform through-silicon via interconnections; Computational modeling; Semiconductor device modeling; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signal and Power Integrity (SPI), 2012 IEEE 16th Workshop on
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4673-1503-6
  • Type

    conf

  • DOI
    10.1109/SaPIW.2012.6222908
  • Filename
    6222908