DocumentCode
2385241
Title
Modeling the self-heating effect in SiGe HBTs
Author
Mnif, H. ; Zimmer, T. ; Battaglia, J.L. ; Ardouin, B.
Author_Institution
Lab. de Microelectronique IXL, Bordeaux I Univ., Talence, France
fYear
2002
fDate
2002
Firstpage
96
Lastpage
99
Abstract
This paper describes a new approach for modeling the self-heating phenomena in silicon germanium (SiGe) heterojunction bipolar transistors (HBT). This approach is based on the physical resolution of the heat transfer differential equation. The model is compared to the electro-thermal model used in most commercial circuit simulators. This new approach produces the better self-heating agreement with measured data. For its validation, it is implemented into a recent compact model.
Keywords
Ge-Si alloys; heat transfer; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; HBT; SiGe; compact model; electro-thermal model; heat transfer differential equation; self-heating; Circuit simulation; Equations; Equivalent circuits; Germanium silicon alloys; Heat transfer; Heating; Heterojunction bipolar transistors; Silicon germanium; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN
1088-9299
Print_ISBN
0-7803-7561-0
Type
conf
DOI
10.1109/BIPOL.2002.1042895
Filename
1042895
Link To Document