• DocumentCode
    2385273
  • Title

    Device mismatch in BiCMOS technologies

  • Author

    Drennan, Patrick G.

  • Author_Institution
    Motorola Inc., Tempe, AZ, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    104
  • Lastpage
    111
  • Abstract
    Device mismatch is fundamental to precision analog design. However, the geometric and bias dependency is often misunderstood and simplistic models lead to overdesign. This paper provides an overview of the physical basis behind mismatch for devices used in BiCMOS technologies. This model is then used to demonstrate some non-obvious effects in circuit application.
  • Keywords
    BiCMOS integrated circuits; MOSFET; bipolar transistors; integrated circuit modelling; BJT; BiCMOS technologies; MOSFET; device mismatch; electrical parameters; geometric dependencies; process parameters; statistical parameter variations; Analog circuits; BiCMOS integrated circuits; Circuit topology; Feedback; Geometry; Mirrors; Photonic band gap; Robustness; Solid modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7561-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2002.1042897
  • Filename
    1042897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2385273