• DocumentCode
    2385316
  • Title

    HICUM parameter extraction methodology for a single transistor geometry

  • Author

    Berger, D. ; Céll, D. ; Schroter, Michael ; Malorn, M. ; Zimmer, T. ; Ardouin, B.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    116
  • Lastpage
    119
  • Abstract
    This paper presents an accurate and efficient extraction methodology for the main parameters of the bipolar compact model HICUM. The proposed flow was successfully applied to several transistors fabricated with various advanced SiGe BiCMOS technologies.
  • Keywords
    BiCMOS integrated circuits; bipolar transistors; semiconductor device models; HICUM parameter extraction methodology; SiGe; advanced BiCMOS technologies; bipolar compact model; multi-geometry approach; single transistor geometry; BiCMOS integrated circuits; Current density; Equations; Geometry; Germanium silicon alloys; Integrated circuit modeling; Parameter extraction; Robustness; Silicon germanium; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7561-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2002.1042899
  • Filename
    1042899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2385316