Title :
Implementation of a Si-rich SiON nucleation layer for an improved selective SiGe HBT architecture
Author :
Van Huylenbroeck, S. ; Loo, R. ; Decoutere, S. ; Vleugels, F. ; Kunnen, E. ; Schaekers, M. ; Caymax, M.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A Si-rich SiON is implemented as nucleation layer in a selective SiGe HBT architecture to improve the SiGe base layer process window and the reactor throughput. The concept is demonstrated in a 0.35 μm BiCMOS technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; nucleation; silicon compounds; 0.35 μm BiCMOS technology; Si-rich SiON nucleation layer; SiGe; SiGe base layer process window; SiON; improved selective SiGe HBT architecture; nucleation layer; reactor throughput; BiCMOS integrated circuits; Etching; Germanium silicon alloys; Hafnium; Heterojunction bipolar transistors; Inductors; Resists; Silicon germanium; Space technology; Throughput;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042905
