• DocumentCode
    2385478
  • Title

    An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter

  • Author

    Martinet, B. ; Romagna, F. ; Kermarrec, O. ; Campidelli, Y. ; Saguin, F. ; Baudry, H. ; Marty, M. ; Dutartre, D. ; Chantre, A.

  • Author_Institution
    Centre Commun de Microelectronique de Crolles, ST Microelectron., Crolles, France
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    147
  • Lastpage
    150
  • Abstract
    We describe the fabrication and characterization of high speed SiGe:C HBTs using a poly-SiGe emitter. The effects of Ge incorporation into the emitter on the static (gain, BVCEO) and dynamic (fT, τECO) device characteristics are analyzed. This experiment is used to quantify the impact of the current gain on fT, and provides an original way to extract the emitter component of the forward transit time.
  • Keywords
    Ge-Si alloys; carbon; heterojunction bipolar transistors; semiconductor materials; SiGe:C; characterization; current gain; dynamic characteristics; emitter component; fabrication; forward transit time; high speed SiGe:C HBTs; poly-SiGe emitter; static characteristics; Degradation; Doping; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Microelectronics; Optical design; Optical fiber communication; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7561-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2002.1042906
  • Filename
    1042906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2385478