Title :
An 8.4 GHz SiGe/Si HBT-based MMIC power amplifier
Author :
Ma, Zhenqiang ; Mohammadi, Saeed ; Bhattacharya, Pallab ; Katehi, Linda P B ; Alterovitz, S.A. ; Ponchak, George E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A single-stage X-band MMIC power amplifier incorporating a SiGe/Si power HBT and lumped passive components is reported. The power HBT is characterized by an fmax of 67 GHz and a BVCBO of more than 24 V. The matching circuits were designed for maximum output power using on-chip spiral inductors and SiO MIM capacitors. Continuous wave measurements were made at 8.4 GHz, under class A operation. The power amplifier demonstrated a linear gain of 8.6 dB, output power at peak efficiency of 22.9 dBm and a saturated output power of 24.8 dBm.
Keywords :
Ge-Si alloys; MIM devices; MMIC power amplifiers; bipolar MIMIC; capacitors; elemental semiconductors; heterojunction bipolar transistors; inductors; integrated circuit measurement; power bipolar transistors; semiconductor materials; silicon; 24 V; 67 GHz; 8.4 GHz; 8.6 dB; SiGe-Si; SiGe/Si HBT-based MMIC power amplifier; SiGe/Si power HBT; SiO MIM capacitors; class A operation; continuous wave measurements; linear gain; lumped passive components; matching circuits; maximum output power; on-chip spiral inductors; output power; peak efficiency; power amplifier; saturated output power; single-stage X-band MMIC power amplifier; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; MIM capacitors; MMICs; Power amplifiers; Power generation; Silicon germanium; Spirals;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042907
