BiCMOS integration of SiGe:C heterojunction bipolar transistors

We demonstrate the advantages of implementing C-doped SiGe HBTs in a BiCMOS technology with respect to manufacturability, RF performance, modular process integration, and low process complexity. SiGe:C HBTs with f_T values above 100 GHz, f_max values up to 180 GHz, and ring oscillator delays lower than 6 ps are demonstrated in a BiCMOS technology without an epitaxially-buried subcollector and without deep trench isolation. High-voltage HBTs with BV_CEO values up to 9 V and BV_CEO×f_T products exceeding 220 VGHz can also be obtained on the same chip. We show that C doping allows the fabrication of the HBT layers before the essential CMOS steps start, paving the way for a truly modular HBT integration in different CMOS platforms. We also address the integration of high-performance RF LDMOS transistors as valuable, additional BiCMOS components.