Title :
SiGe W-CDMA transmitter for mobile terminal application
Author :
Malhi, Duljit ; Joba, Hiroyuki ; Demirdag, Cuneyt ; Takahashi, Yoshinori ; Wang, Dawn ; Matsunam, Yoshinori ; Larson, Lawrence ; Shinjo, Shintaro ; Gao, Weinan ; Suematsu, Noriharu ; Glasser, Jean-Marc ; Chominski, Paul ; Pereira, Victoria ; Prestia, Larr
Author_Institution :
Commun. Res. & Dev. Center, IBM Microelectron., Lowell, MA, USA
Abstract :
This paper presents the experimental results of a transmitter IC for W-CDMA mobile terminal application based on a super heterodyne architecture. Implemented by utilizing IBM´s 0.5 μm SiGe BiCMOS technology, the transmitter IC consumes approximately 270 mW with a 3.0 V power supply. The RFIC features an OIP3 of +25.0 dBm, a 95 dB dynamic range and 6.3% EVM.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; mobile radio; radio transmitters; semiconductor materials; 270 mW; 3.0 V; BiCMOS technology; RFIC; SiGe; W-CDMA transmitter; mobile terminal; super heterodyne architecture; transmitter IC; wireless communication; BiCMOS integrated circuits; Bit rate; Dynamic range; Germanium silicon alloys; Mobile communication; Multiaccess communication; Power generation; Power supplies; Silicon germanium; Transmitters;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042912
