Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications

Author

John, Jay P. ; Chai, Francis ; Morgan, Dave ; Keller, Theresa ; Kirchgessner, Jim ; Reuter, Ralf ; Rueda, Heman ; Teplik, Jim ; White, Jan ; Wipf, Sandy ; Zupac, Dragan

Author_Institution

Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA

fYear

2002

fDate

2002

Firstpage

193

Lastpage

196

Abstract

The performance enhancement of a SiGe:C HBT for RF/IF applications is described for Motorola´s 0.35 μm and 0.18 μm BiCMOS technologies. Cutoff frequencies (f_T) have been improved from 50 GHz to 78/84 GHz (0.35/0.18 μm BiCMOS), with a reduction in minimum noise figure (NF) from 0.7 dB to 0.30 dB. Improvements occurred through the optimization of the intrinsic collector and base dopant profiles, extrinsic collector resistance, and device layout.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; optimisation; semiconductor device noise; semiconductor materials; 0.18 micron; 0.35 micron; 0.7 to 0.30 dB; 50 to 84 GHz; BiCMOS technology; HBT; Motorola; RF/IF applications; SiGe:C; cutoff frequency; device layout; extrinsic collector resistance; intrinsic base dopant profile; intrinsic collector dopant profile; low power wireless applications; minimum noise figure; optimization; performance enhancement; BiCMOS integrated circuits; CMOS technology; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Laboratories; Manufacturing; Noise figure; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

ISSN

1088-9299

Print_ISBN

0-7803-7561-0

Type

conf

DOI

10.1109/BIPOL.2002.1042916

Filename

1042916