Title :
An integrated SiGe transmitter circuit for 24 GHz radar sensors
Author :
Wennekers, P. ; Ghazionour, A. ; Reuter, R.
Author_Institution :
Semicond. Product Sector, Motorola Inc., Berlin, Germany
Abstract :
The design of an integrated transmitter circuit is described, which operates in the 24 GHz band. The circuit is comprised of a VCO, which delivers 18 mW power at 50 ohm, a frequency divider chain and an additional RF output to drive the LO-input of a receiver chip in a 24 GHz FM-CW radar system. SiGe-HBTs with typical Ft=48 GHz/Fmax=80 GHz and VCEO >3.2 V of a production SiGe-BiCMOS process are used as active devices. All resonators and matching circuits are implemented on chip by using the 4-layer dielectric/metal (AlCu) stack of the process.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; frequency dividers; heterojunction bipolar transistors; microwave integrated circuits; radar transmitters; semiconductor materials; voltage-controlled oscillators; 18 mW; 24 GHz; 24 GHz FM-CW radar system; 4-layer dielectric/(AlCu) stack; AlCu; BiCMOS process; HBT; SiGe; VCO; active devices; additional RF output; frequency divider chain; integrated transmitter circuit; radar sensors; receiver chip LO-input; Circuits; Dielectrics; Frequency conversion; Germanium silicon alloys; Production; Radar; Radio frequency; Silicon germanium; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042920
