Title :
71.8 GHz static frequency divider in a SiGe bipolar technology
Author :
Bock, J. ; Knapp, Herbert ; Aufinger, Klaus
Abstract :
A 2:1 static frequency divider fabricated in a 0.35 μm SiGe bipolar technology is described. It operates up to 71.8 GHz and draws 132 mA from a single 4.5 V supply. Continuous operation up to the maximum operating frequency of 71.8 GHz has been demonstrated. This operating frequency is the highest achieved for this type of circuit in Si-based technologies and comparable with the fastest static dividers realized in III-V technologies.
Keywords :
Ge-Si alloys; bipolar MMIC; frequency dividers; high-speed integrated circuits; semiconductor materials; 0.35 μm bipolar technology; 0.35 micron; 132 mA; 2:1 static frequency divider; 4.5 V; 71.8 GHz; SiGe; maximum operating frequency; Boron; Circuit synthesis; Frequency conversion; Germanium silicon alloys; Indium gallium arsenide; Master-slave; Optical frequency conversion; Radio frequency; Silicon germanium; Switches;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042921
