DocumentCode
2385740
Title
71.8 GHz static frequency divider in a SiGe bipolar technology
Author
Bock, J. ; Knapp, Herbert ; Aufinger, Klaus
fYear
2002
fDate
2002
Firstpage
216
Lastpage
219
Abstract
A 2:1 static frequency divider fabricated in a 0.35 μm SiGe bipolar technology is described. It operates up to 71.8 GHz and draws 132 mA from a single 4.5 V supply. Continuous operation up to the maximum operating frequency of 71.8 GHz has been demonstrated. This operating frequency is the highest achieved for this type of circuit in Si-based technologies and comparable with the fastest static dividers realized in III-V technologies.
Keywords
Ge-Si alloys; bipolar MMIC; frequency dividers; high-speed integrated circuits; semiconductor materials; 0.35 μm bipolar technology; 0.35 micron; 132 mA; 2:1 static frequency divider; 4.5 V; 71.8 GHz; SiGe; maximum operating frequency; Boron; Circuit synthesis; Frequency conversion; Germanium silicon alloys; Indium gallium arsenide; Master-slave; Optical frequency conversion; Radio frequency; Silicon germanium; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN
1088-9299
Print_ISBN
0-7803-7561-0
Type
conf
DOI
10.1109/BIPOL.2002.1042921
Filename
1042921
Link To Document