Title :
30 GHz monolithic voltage-controlled oscillator with dual-modulus prescaler in SiGe bipolar technology
Author :
Ritzberger, Günter ; Knapp, Herbert ; Böck, Josef ; Aufinger, Klaus
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
This paper presents an integrated circuit suitable for frequency synthesis. The circuit consists of a monolithic voltage-controlled oscillator operating up to 30.5 GHz with static divide-by-256/divide-by-257 dual-modulus prescaler and consumes 500 mW from the 5.3 V supply. It is manufactured in a pre-production 0.4 μm/85 GHz SiGe bipolar technology.
Keywords :
Ge-Si alloys; bipolar MMIC; frequency dividers; frequency synthesizers; prescalers; semiconductor materials; voltage-controlled oscillators; 0.4 micron; 24 to 30 GHz; 30 GHz monolithic voltage-controlled oscillator; 30.5 GHz; 5.3 V; 500 mW; 85 GHz; SiGe; frequency synthesis; integrated circuit; pre-production 0.4 μm/85 GHz bipolar technology; static divide-by-256/divide-by-257 dual-modulus prescaler; Circuit optimization; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Integrated circuit synthesis; Integrated circuit technology; Master-slave; Silicon germanium; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042922
