Low-frequency noise variation in scaled SiGe HBTs

Author

Jin, Zhenrong ; Cressler, John D. ; Guofu Ni ; Joseph, Alvin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2002

fDate

2002

Firstpage

224

Lastpage

227

Abstract

The influence of geometrical scaling on low-frequency noise in SiGe HBTs is presented for the first time. Small-size transistors show a strong variation in noise across many samples, whereas the noise in larger devices is more statistically reproducible. The impact of size variations on noise can produce challenges for accurate compact modeling. This effect is investigated using reverse-bias emitter-base stress measurements and calculations based on the superposition of G/R noise sources.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; semiconductor materials; G/R noise sources; GeSi; compact modeling; geometrical scaling; low-frequency noise variation; reverse-bias emitter-base stress measurements; scaled SiGe HBTs; small-size transistors; superposition; Circuit noise; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; MOSFETs; Noise measurement; Semiconductor device noise; Silicon germanium; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

ISSN

1088-9299

Print_ISBN

0-7803-7561-0

Type

conf

DOI

10.1109/BIPOL.2002.1042923

Filename

1042923