Title :
An improved model for high-frequency noise in BJTs and HBTs interpolating between the quasi-thermal approach and the correlated-shot-noise model
Author :
Moller, Jesco ; Heinernann, B. ; Herzel, Frank
Author_Institution :
IHP, Frankfurt, Germany
Abstract :
This paper presents and verifies an improved model for high-frequency noise in BJTs and HBTs. Based on measurements on a SiGe:C HBT, a transition from quasithermal behavior at low currents to correlated shot noise at large currents is clearly demonstrated. The model is specially suited for 2D device simulation, since the minimum noise figure can be directly obtained from simulated Y-parameters.
Keywords :
Ge-Si alloys; bipolar transistors; carbon; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; shot noise; thermal noise; 2D device simulation; BJTs; HBTs; SiGe:C; SiGe:C HBT; correlated-shot-noise model; high-frequency noise; large currents; low currents; minimum noise figure; model; quasi-thermal approach; simulated Y-parameters; Circuit noise; Circuit simulation; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Integrated circuit noise; Noise figure; Noise measurement; Scattering parameters; Thermodynamics;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042924
