DocumentCode :
2385846
Title :
A high-injection transit-time model for heterojunction barrier effects in SiGe HBTs
Author :
Liang, Qingqing ; Cressler, John D. ; Guofu Niu ; Malladi, Ramana M. ; Newton, Kim ; Harame, David L.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Tech., Atlanta, GA, USA
fYear :
2002
fDate :
2002
Firstpage :
236
Lastpage :
238
Abstract :
A physics-based fT model considering high-injection heterojunction barrier effects in SiGe HBTs is derived. It accurately captures fT behavior at high JC, and offers better insight into the Kirk and barrier effect In SiGe HBTs.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; high field effects; semiconductor device models; Kirk effect; SiGe; SiGe HBTs; heterojunction barrier effects; high-injection transit-time model; Electronic mail; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Kirk field collapse effect; Microelectronics; Microwave frequencies; Physics computing; Radio frequency; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN :
1088-9299
Print_ISBN :
0-7803-7561-0
Type :
conf
DOI :
10.1109/BIPOL.2002.1042926
Filename :
1042926
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2385846
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