Title :
High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies -- Comparison of HfO2 and HfSiON
Author :
Krishnan, Siddarth A. ; Harris, H. Rusty ; Kirsch, Paul D. ; Krug, Cristiano ; Quevedo-Lopez, Manuel ; Young, Chadwin ; Lee, Byoung Hun ; Choi, Rino ; Chowdhury, Naser ; Suthram, Sagar ; Thompson, Scott ; Bersuker, Gennadi ; Jammy, Rajarao
Author_Institution :
SEMATECH, Austin, TX
Abstract :
A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO2 and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized atomic layer deposited (ALD) HfO2 on Si(110) substrates with a ~ 3.3times high field hole mobility (μh) enhancement vs. a Si(100) substrate. On-state drain current (Ion) obtained for the HfO2/Si(110) is ~831 μA/μm at 100 nA/μm offstate drain current (Ioff). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO2 and HfSiON on Si(110). HfO2 exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO 2 has reduced coulomb and surface roughness scattering vs. HfSiON
Keywords :
MOSFET; hafnium compounds; oxygen compounds; silicon compounds; HfO2; HfSiON; Si(110) substrates; atomic layer deposition; field hole mobility enhancement; hybrid orientation technologies; offstate drain current; on-state drain current; p-channel MOSFET; pFET; strain engineering; surface roughness scattering; temperature measurements; Atomic layer deposition; Capacitive sensors; Current measurement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Rough surfaces; Surface roughness; Temperature measurement;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346758
