• DocumentCode
    2385874
  • Title

    High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies -- Comparison of HfO2 and HfSiON

  • Author

    Krishnan, Siddarth A. ; Harris, H. Rusty ; Kirsch, Paul D. ; Krug, Cristiano ; Quevedo-Lopez, Manuel ; Young, Chadwin ; Lee, Byoung Hun ; Choi, Rino ; Chowdhury, Naser ; Suthram, Sagar ; Thompson, Scott ; Bersuker, Gennadi ; Jammy, Rajarao

  • Author_Institution
    SEMATECH, Austin, TX
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO2 and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized atomic layer deposited (ALD) HfO2 on Si(110) substrates with a ~ 3.3times high field hole mobility (μh) enhancement vs. a Si(100) substrate. On-state drain current (Ion) obtained for the HfO2/Si(110) is ~831 μA/μm at 100 nA/μm offstate drain current (Ioff). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO2 and HfSiON on Si(110). HfO2 exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO 2 has reduced coulomb and surface roughness scattering vs. HfSiON
  • Keywords
    MOSFET; hafnium compounds; oxygen compounds; silicon compounds; HfO2; HfSiON; Si(110) substrates; atomic layer deposition; field hole mobility enhancement; hybrid orientation technologies; offstate drain current; on-state drain current; p-channel MOSFET; pFET; strain engineering; surface roughness scattering; temperature measurements; Atomic layer deposition; Capacitive sensors; Current measurement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Rough surfaces; Surface roughness; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346758
  • Filename
    4154177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2385874