Title :
Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates
Author :
Terashima, Koichi ; Manabe, Kenzo ; Takahashi, Kensuke ; Watanabe, Koji ; Ogura, Takashi ; Saitoh, Motofumi ; Oshida, Makiko ; Ikarashi, Nobuyuki ; Tatsumi, Toru ; Watanabe, Hirohito
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Kanagawa
Abstract :
The methods for controlling threshold voltage (Vth) of Ni-fully-silicide (Ni-FUSI)/HfSiON CMOSFETs on SOI substrates were investigated. We achieved the suitable Vth for both low standby power (LSTP) and low operation power (LOP) devices by using the adjustment of channel doping for NFETs with NiSi gate electrode and the phase controlled (PC) Ni-FUSI technique for PFETs. We also investigated the Vth control by implantation of F and N. Applying the F-implantation technique to Ni-FUSI/HfSiON CMOSFETs on SOI substrates has the possibility to realize Vth control for both LSTP and LOP devices by single phase Ni-FUSI (NiSi) gate electrode
Keywords :
MOSFET; hafnium compounds; nickel compounds; oxygen compounds; silicon compounds; silicon-on-insulator; voltage control; CMOSFET; F-implantation technique; HfSiON; MOSFET; N-implantation technique; NFET; NiSi; PFET; SOI substrates; fully-silicide; gate electrode; low operation power devices; low standby power devices; phase controlled technique; threshold voltage control methods; Annealing; CMOSFETs; Control systems; Doping; Electrodes; FETs; Fabrication; High K dielectric materials; MOSFETs; Voltage control;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346760
