Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates

Author

Terashima, Koichi ; Manabe, Kenzo ; Takahashi, Kensuke ; Watanabe, Koji ; Ogura, Takashi ; Saitoh, Motofumi ; Oshida, Makiko ; Ikarashi, Nobuyuki ; Tatsumi, Toru ; Watanabe, Hirohito

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Kanagawa

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The methods for controlling threshold voltage (Vth) of Ni-fully-silicide (Ni-FUSI)/HfSiON CMOSFETs on SOI substrates were investigated. We achieved the suitable Vth for both low standby power (LSTP) and low operation power (LOP) devices by using the adjustment of channel doping for NFETs with NiSi gate electrode and the phase controlled (PC) Ni-FUSI technique for PFETs. We also investigated the Vth control by implantation of F and N. Applying the F-implantation technique to Ni-FUSI/HfSiON CMOSFETs on SOI substrates has the possibility to realize Vth control for both LSTP and LOP devices by single phase Ni-FUSI (NiSi) gate electrode

Keywords

MOSFET; hafnium compounds; nickel compounds; oxygen compounds; silicon compounds; silicon-on-insulator; voltage control; CMOSFET; F-implantation technique; HfSiON; MOSFET; N-implantation technique; NFET; NiSi; PFET; SOI substrates; fully-silicide; gate electrode; low operation power devices; low standby power devices; phase controlled technique; threshold voltage control methods; Annealing; CMOSFETs; Control systems; Doping; Electrodes; FETs; Fabrication; High K dielectric materials; MOSFETs; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346760

Filename

4154179