On-wafer inductance and resistance characterization of sub-5pH deep silicon via (DSV)

Author

Blaschke, Volker ; Zwingman, Robert

Author_Institution

TowerJazz, Newport Beach, CA, USA

fYear

2010

fDate

22-25 March 2010

Firstpage

136

Lastpage

139

Abstract

A low parasitic inductance ground for SiGe power amplifiers has been realized using a deep silicon via (DSV). The inductance of the DSV is approximately one order of magnitude smaller than the thru-wafer-via (TWV) inductance of ~21 pH enabling a ground path for power amplifiers in common emitter configuration with literally no parasitic inductance. In this paper we compare two on-wafer measurement approaches, a single port and a two port shunt resonator test structure to characterize such a small inductance. The resistive component in the DSV is dominating and required careful consideration in the two approaches to yield accurate characterization results.

Keywords

inductance; power amplifiers; resonators; silicon; silicon compounds; DSV; SiGe power amplifiers; TWV inductance; deep silicon via; emitter configuration; on-wafer inductance; on-wafer measurement; parasitic inductance ground; resistance characterization; resistive component; shunt resonator test structure; thru-wafer-via inductance; Capacitors; Electrical resistance measurement; Germanium silicon alloys; Inductance measurement; Kelvin; Radio frequency; Resonance; Shunt (electrical); Silicon germanium; Testing; SiGe power amplifiers; common emitter configuration; deep silicon via; shunt resonator; thru-wafer via;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on

Conference_Location

Hiroshima

Print_ISBN

978-1-4244-6912-3

Electronic_ISBN

978-1-4244-6914-7

Type

conf

DOI

10.1109/ICMTS.2010.5466839

Filename

5466839