• DocumentCode
    2385950
  • Title

    Suppression of Poly-Gate-Induced Fluctuations in Carrier Profiles of Sub-50nm MOSFETs

  • Author

    Fukutome, H. ; Momiyama, Y. ; Kubo, T. ; Yoshida, E. ; Morioka, H. ; Tajima, M. ; Aoyama, T.

  • Author_Institution
    Fujitsu Labs. Ltd., Tokyo
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have investigated what effects randomly oriented and rotated poly-Si gate grains have on lateral carrier profiles in sub-50-nm MOSFETs by direct observations and electrical measurements. Since amorphous gates suppress random channeling penetration of pocket implants, we have increased effective mobility (40%), improved Vth roll-off characteristic (7 nm) and decreased Vth fluctuation (-26%)
  • Keywords
    MOSFET; elemental semiconductors; silicon; 50 nm; MOSFET; Si; amorphous gate; electrical measurements; lateral carrier profiles; pocket implants; poly-Si gate grains; poly-gate-induced fluctuations; random channeling penetration; Amorphous materials; Electric variables; Electric variables measurement; Electrodes; FETs; Fluctuations; Implants; MOSFETs; Rotation measurement; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0439-8
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346762
  • Filename
    4154181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2385950