Title :
Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies
Author :
Amusan, O.A. ; Bhuva, B.L. ; Casey, M.C. ; Gadlage, M.J. ; McMorrow, D. ; Melinger, J.S. ; Massengill, L.W.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Abstract :
A novel on-chip test circuit to measure single-event-induced charge sharing has been developed and implemented in an IBM 90 nm process. Test measurements with Two-Photon Absorption (TPA) backside laser irradiation helps demonstrate the effectiveness of the test circuit in characterizing charge sharing effects for sub-100 nm bulk CMOS processes.
Keywords :
CMOS integrated circuits; integrated circuit testing; laser beam applications; two-photon spectra; IBM process; bulk CMOS processes; deep-submicron technologies; on-chip test circuit; single-event-induced charge sharing; size 90 nm; two-photon absorption backside laser irradiation; Absorption; CMOS process; CMOS technology; Charge measurement; Circuit testing; Current measurement; Error analysis; Microelectronics; Particle measurements; Transistors; charge collection; charge sharing; on-chip test circuit; single event circuit characterization; two-photon absorption;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466844
