DocumentCode :
2386030
Title :
Promising a-Si:H TFTs with High Mechanical Reliability for Flexible Display
Author :
Lee, M.H. ; Ho, K.-Y. ; Chen, P.-C. ; Cheng, C.-C. ; Chang, S.T. ; Tang, M. ; Liao, M.H. ; Yeh, Y.-H.
Author_Institution :
Display Technol. Center, Ind. Technol. Res. Inst., Hsinchu
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
4
Abstract :
The high mechanical reliability of a-Si:H TFTs have been fabricated on plastic substrate for flexible display applications. The promising TFT backplane has been successfully applied for AMLCD on colorless polyimide (PI) substrate. The tri-layer of Ti/Al/Ti with 10 mum width are used as scan lines and data lines to replace Cr for stress compensation, and can sustain mechanical bending cycles. The TFTs at 200degC on PI substrate have superior stability with external strain and bending cycles. The redistribution of trap states is analyzed by modeling simulation. The promising a-Si:H TFTs on PI substrate after bending cycles still have superior operation and electrical stress stability and make it possible for AMOLED applications. The Si-based TFTs with high mechanical reliability are highly potential candidate for flexible active-matrix display beyond FPD (flat panel display) generation
Keywords :
LED displays; aluminium; elemental semiconductors; flexible electronics; silicon; thin film transistors; titanium; 10 micron; 200 C; AMLCD; AMOLED applications; Si:H; TFT backplane; Ti-Al-Ti; bending cycle; colorless polyimide substrate; data lines; electrical stress stability; flat panel display; flexible active-matrix display; mechanical bending cycles; mechanical reliability; plastic substrate; scan lines; strain cycle; stress compensation; thin film transistors; trap states; Active matrix liquid crystal displays; Backplanes; Capacitive sensors; Chromium; Flat panel displays; Plastics; Polyimides; Stability; Stress; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
Type :
conf
DOI :
10.1109/IEDM.2006.346767
Filename :
4154186
Link To Document :
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