Title :
High Stability, Low Leakage Nanocrystalline Silicon Bottom Gate Thin Film Transistors for AMOLED Displays
Author :
Rad, Mohammad R Esmaeili ; Sazonov, Andrei ; Nathan, Arokia
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.
Abstract :
We report performance characteristics of nanocrystalline silicon thin-film transistors (TFTs) fabricated at 280 degC by plasma-enhanced chemical vapor deposition. The TFTs exhibit field-effect mobility of 0.8 cm2V-1s-1, threshold voltage of 4 V, on/off current ratio about 108 with an off-current of 10-13 A, and subthreshold slope of 0.8 V/dec. Bias stress measurements show that the TFT is 3-5 times more stable than the hydrogenated amorphous silicon (a-Si:H) counterpart, with a shift in threshold voltage that is less than 5 % at a gate voltage of 15 V
Keywords :
LED displays; amorphous semiconductors; elemental semiconductors; organic light emitting diodes; plasma CVD; silicon; thin film transistors; 15 V; 280 C; 4 V; AMOLED displays; bias stress measurements; field-effect mobility; hydrogenated amorphous silicon; nanocrystalline silicon bottom gate thin film transistors; plasma-enhanced chemical vapor deposition; Active matrix organic light emitting diodes; Chemical vapor deposition; Plasma chemistry; Plasma displays; Plasma properties; Plasma stability; Silicon; Stress measurement; Thin film transistors; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346768
