Title :
Highly Stable Ga2O3-In2O3-ZnO TFT for Active-Matrix Organic Light-Emitting Diode Display Application
Author :
Kim, Chang Jung ; Kang, Donghun ; Song, Ihun ; Park, Jae Chul ; Lim, Hyuck ; Kim, Sunil ; Lee, Eunha ; Chung, Ranju ; Lee, Jae Cheol ; Park, Youngsoo
Author_Institution :
Semicond. Device & Material Lab., Gyeonggi-Do
Abstract :
We, for the first time, have successfully fabricated amorphous Ga 2O3-In2O3-ZnO thin film transistor (TFT) with excellent electrical properties and good stability under constant current stress. This transistor shows a field effect mobility of 10 cm2/Vs, an off current below 2 pA and a drain current on-to-off ratio of above 108. The threshold voltage shift was less than 0.2 V for 100 hours at 3 muA and 60 degC. Such stable oxide transistors can be utilized as driving transistor for large area OLED display
Keywords :
LED displays; amorphous semiconductors; gallium compounds; indium compounds; organic light emitting diodes; zinc compounds; 100 hrs; 3 muA; 60 C; Ga2O3-In2O3-ZnO; OLED display; active-matrix organic light-emitting diode display; amorphous thin film transistor; constant current stress; driving transistor; electrical properties; field effect mobility; stable oxide transistors; Active matrix organic light emitting diodes; Active matrix technology; Electrodes; Flat panel displays; Organic light emitting diodes; Plasma temperature; Stability; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346769
