• DocumentCode
    2386152
  • Title

    Direct probing of trapped charge dynamics in SiN by Kelvin Force Microscopy

  • Author

    Vianello, E. ; Nowak, E. ; Mariolle, D. ; Chevalier, N. ; Perniola, L. ; Molas, G. ; Colonna, J.P. ; Driussi, F. ; Selmi, L.

  • Author_Institution
    DIEGM, Univ. of Udine, Udine, Italy
  • fYear
    2010
  • fDate
    22-25 March 2010
  • Firstpage
    94
  • Lastpage
    97
  • Abstract
    In this work, we explore the potential of Kelvin Force Microscopy (KFM) measurements to investigate the lateral charge transport in SiN layers with two different compositions (standard, std, and Silicon rich, Si-rich). The dynamics of the lateral spread of the trapped charge is analyzed with the help of three dimensional numerical device simulations.
  • Keywords
    charge exchange; microscopy; numerical analysis; silicon compounds; KFM; Kelvin force microscopy; SiN; Trapped Charge Probing; lateral charge transport; three dimensional numerical device simulations; volatile memory cells; Analytical models; Charge carrier processes; Charge measurement; Current measurement; Force measurement; Kelvin; Measurement standards; Microscopy; Numerical simulation; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
  • Conference_Location
    Hiroshima
  • Print_ISBN
    978-1-4244-6912-3
  • Electronic_ISBN
    978-1-4244-6914-7
  • Type

    conf

  • DOI
    10.1109/ICMTS.2010.5466851
  • Filename
    5466851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2386152