Title :
A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications
Author :
Hamamoto, Takeshi ; Minami, Yoshihiro ; Shino, Tomoaki ; Sakamoto, Atsushi ; Higashi, Tomoki ; Kusunoki, Naoki ; Fujita, Katsuyuki ; Hatsuda, Kosuke ; Ohsawa, Takashi ; Aoki, Nobutoshi ; Tanimoto, Hiroyoshi ; Morikado, Mutsuo ; Nakajima, Hiroomi ; Inoh, K
Author_Institution :
SoC Res. & Dev. Center, Toshiba Corp., Yokohama
Abstract :
Floating body cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed
Keywords :
CMOS memory circuits; DRAM chips; embedded systems; silicon-on-insulator; 90 nm; CMOS technology; SOI DRAM; SOI substrate; floating body cell; high density embedded memory; one-transistor memory cell; CMOS process; CMOS technology; Fabrication; Large scale integration; MOSFET circuits; Microelectronics; Random access memory; Research and development; Signal design; Wiring;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220785
