DocumentCode :
2386455
Title :
Multi-Gate MOSFETs with Back-Gate Control
Author :
Hiramoto, Toshiro ; Nagumo, Toshiharu
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ.
fYear :
0
fDate :
0-0 0
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, we develop a design guideline for multi-gate MOSFET for Vth control. The design window of channel height (tSi) and width (wSi) to obtain both sufficiently large gamma and suppressed SCE in hp45 node LSTP devices is shown by 3D device simulation. The channel width dependence of gamma is also experimentally examined
Keywords :
MOSFET; circuit simulation; low-power electronics; voltage control; 3D device simulation; LSTP devices; back-gate control; low standby power; multigate MOSFET; short channel effect; suppressed SCE; Design methodology; Electron beams; FinFETs; Guidelines; Leakage current; Lithography; MOSFETs; Shape; Silicon; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
Type :
conf
DOI :
10.1109/ICICDT.2006.220797
Filename :
1669384
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2386455
بازگشت