• DocumentCode
    2386455
  • Title

    Multi-Gate MOSFETs with Back-Gate Control

  • Author

    Hiramoto, Toshiro ; Nagumo, Toshiharu

  • Author_Institution
    Inst. of Ind. Sci., Tokyo Univ.
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we develop a design guideline for multi-gate MOSFET for Vth control. The design window of channel height (tSi) and width (wSi) to obtain both sufficiently large gamma and suppressed SCE in hp45 node LSTP devices is shown by 3D device simulation. The channel width dependence of gamma is also experimentally examined
  • Keywords
    MOSFET; circuit simulation; low-power electronics; voltage control; 3D device simulation; LSTP devices; back-gate control; low standby power; multigate MOSFET; short channel effect; suppressed SCE; Design methodology; Electron beams; FinFETs; Guidelines; Leakage current; Lithography; MOSFETs; Shape; Silicon; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
  • Conference_Location
    Padova
  • Print_ISBN
    1-4244-0097-X
  • Type

    conf

  • DOI
    10.1109/ICICDT.2006.220797
  • Filename
    1669384
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2386455