Author :
Noda, T. ; Vandervorst, W. ; Felch, S. ; Parihar, V. ; Vrancken, C. ; Severi, S. ; Falepin, A. ; Janssens, T. ; Bender, H. ; van Daele, B. ; Eyben, P. ; Niwa, M. ; Schreutelkamp, R. ; Nouri, F. ; Absil, P.P. ; Jurczak, M. ; De Meyer, K. ; Biesemans, S.
Abstract :
Sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through experiments and atomistic KMC modeling. NLA can improve the dopant activation dramatically and achieve shallow junctions. B diffusivity during sub-ms annealing is discussed for the first time. The KMC model with FnVm complexes indicates that the thermal budget of sub-ms annealing is too small for full defect evolution and one possible solution for defect stabilization is F co-implant
Keywords :
Monte Carlo methods; diffusion; laser beam annealing; semiconductor doping; B diffusivity; F co-implant; atomistic kinetic Monte Carlo; defect evolution; dopant activation improvement; dopant diffusion; nonmelt laser annealing; Annealing; Atom lasers; Atomic beams; Atomic layer deposition; Boron; Kinetic theory; Laser modes; Monte Carlo methods; Semiconductor process modeling; Temperature;
