Discrete Dopant Fluctuation in Limited-Width FinFETs for VLSI Circuit Application: A Theoretical Study

Author

Chiang, Meng-Hsueh ; Lin, Jeng-Nan ; Kim, Keunwoo ; Chuang, Ching-Te

Author_Institution

Nat. Ilan Univ., I-Lan

fYear

0

fDate

0-0 0

Firstpage

1

Lastpage

4

Abstract

The random dopant fluctuation (RDF) in double-gate (DG) devices is investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, especially FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an undoped silicon channel, the existence of unwanted impurity dopant will still have a significant impact on device characteristics. Design implication from RDF is also discussed

Keywords

MOSFET; VLSI; doping profiles; numerical analysis; semiconductor doping; silicon; DG devices; RDF effects; Si; VLSI circuit; discrete dopant fluctuation; double-gate; fin height; impurity dopant; limited-width FinFET; physical analyses; random dopant fluctuation; undoped silicon channel; Channel bank filters; Doping; FinFETs; Fluctuations; Impurities; MOSFET circuits; Numerical simulation; Resource description framework; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on

Conference_Location

Padova

Print_ISBN

1-4244-0097-X

Type

conf

DOI

10.1109/ICICDT.2006.220800

Filename

1669387