Title :
1 nm NiSi/Si Junction Design based on First-Principles Calculation for Ultimately Low Contact Resistance
Author :
Yamauchi, Takashi ; Kinoshita, Atsuhiro ; Tsuchiya, Yoshinori ; Koga, Junji ; Kato, Koichi
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki
Abstract :
This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles generation at the nickel silicide (NiSi)/silicon (Si) interface, based on first-principles calculations. Dipole comforting SBH is dramatically reduced to 0.1 eV in 1 nm region around the interface for the case of B atoms substituted for Si atoms. The results suggest that NiSi with appropriate dopant preparation is a plausible electrode material for ultimately small p-MOSFETs
Keywords :
MOSFET; Schottky barriers; boron; contact resistance; elemental semiconductors; nickel compounds; silicon; 0.1 eV; 1 nm; B; NiSi-Si; Schottky barrier height modulation effect; Si; contact resistance; dipoles generation; electrode material; first-principles calculation; junction design; p-MOSFET; Atomic layer deposition; Contact resistance; Electronic mail; Interface states; Laboratories; Large scale integration; Nickel; Schottky barriers; Silicides; Silicon;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346791
