DocumentCode :
2386531
Title :
Assessment of Process-Induced Damage in High- κ Transistors
Author :
Young, C.D. ; Choi, R. ; Dawei Heh ; Neugroschel, A. ; Hokyung Park ; Chang Yong Kang ; Brown, G.A. ; Seung Chul Song ; Byoung Hun Lee ; Bersuker, G.
Author_Institution :
SEMATECH, Austin, TX
fYear :
2006
fDate :
1-4 May 2006
Firstpage :
1
Lastpage :
4
Abstract :
Using a combination of electrical characterization techniques, one can separate contributions from generated and pre-existing electron traps inherent to high-k dielectrics, as well as identify process-induced effects in the device characteristics
Keywords :
electron traps; high-k dielectric thin films; impurity states; electrical characterization techniques; electron traps; high-k dielectrics; high-k transistors; process-induced damage; Capacitance-voltage characteristics; Data mining; Dielectric substrates; Electron mobility; Electron traps; High K dielectric materials; High-K gate dielectrics; Pulse measurements; Semiconductor films; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
Type :
conf
DOI :
10.1109/ICICDT.2006.220802
Filename :
1669389
Link To Document :
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