• DocumentCode
    2386589
  • Title

    A comparative study of dielectric properties of As2Se3 and As2Se3Bix glassy systems

  • Author

    Bordovsky, G.A. ; Bordovsky, V.A. ; Castro, R.A.

  • Author_Institution
    Dept. of Electron. Phys., Hertzen State Pedagogical Univ., St. Petersburg, Russia
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    141
  • Lastpage
    143
  • Abstract
    We report about the peculiarities of the dielectric properties of a-As2Se3 and As2Se3Bix (x=20 at.%) layers. The As2Se3 layers are characterized by gradual decrease of ε with frequency and increase with temperature. A broad maximum is registered on tgδ-f dependence. At low frequencies f<10-1 Hz the loss factor increases with temperature. For modified system As2Se3Bix much greater decrease of ε with frequency and increase with temperature is found. tgδ-f dependence of this system demonstrates no maximum and at frequencies f<10-1 Hz the loss factor decreases with temperature. The mentioned above results confirm the assumption that the metal dopants act as positively charge impurities.
  • Keywords
    arsenic compounds; chalcogenide glasses; dielectric losses; permittivity; As2Se3; As2Se3 glassy system; As2Se3Bi; As2Se3Bix glassy system; dielectric properties; loss factor; permittivity; Bismuth; Dielectric constant; Dielectric materials; Equations; Frequency; Glass; Impurities; Physics; Polarization; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 2002. ISE 11. Proceedings. 11th International Symposium on
  • Print_ISBN
    0-7803-7560-2
  • Type

    conf

  • DOI
    10.1109/ISE.2002.1042964
  • Filename
    1042964
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2386589