Physics-based analytical model of chalcogenide-based memories for array simulation

Author

Ielmini, Daniele ; Zhang, Yuegang

Author_Institution

DEI, Politecnico di Milano

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The conduction mechanisms in chalcogenide materials for phase-change memory (PCM) applications are studied. A trap-limited transport model for sub-threshold conduction in the amorphous chalcogenide is presented, and extended to threshold switching in the amorphous phase and transport in the highly-conductive crystalline phase, providing a fully-comprehensive, analytical model for PCMs. Finally, a PCM self-rectifying cross-point device is studied with the aid of the model, allowing to evaluate the array performance for different temperatures, read scheme and array size

Keywords

amorphous semiconductors; chalcogenide glasses; integrated circuit modelling; phase change materials; random-access storage; amorphous chalcogenide; array simulation; chalcogenide materials; chalcogenide-based memories; conduction mechanisms; highly-conductive crystalline phase; phase-change memory; physics-based analytical model; self-rectifying cross-point device; subthreshold conduction; threshold switching; trap-limited transport model; Amorphous materials; Analytical models; Conducting materials; Crystalline materials; Crystallization; Electron traps; Phase change materials; Phase change memory; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346795

Filename

4154214