DocumentCode :
2386639
Title :
The effective method of reducing slurry for interlayer dielectric CMP
Author :
Ishimoto, Kohichi
Author_Institution :
Semicond. Operations, IBM Japan Ltd, Shiga, Japan
fYear :
2000
fDate :
2000
Firstpage :
153
Lastpage :
156
Abstract :
Recently chemical mechanical polishing (CMP) became a routine process in semiconductor manufacturing process. However one problem is that the slurry consumption in CMP process is very large. Some experiments are aimed at reducing slurry consumption. Our research showed that the slurry was needed only at the start of polishing in ILD CMP and that we could planarize without slurry after the midpoint of polishing. This paper describes a method of reducing slurry for interlayer dielectric CMP and we predict that the application of this method to our ILD CMP process could reduce waste slurry by about 50%
Keywords :
chemical mechanical polishing; ILD CMP; chemical mechanical polishing; interlayer dielectric CMP; planarization; semiconductor manufacturing process; slurry consumption; slurry reduction; Chemical processes; Costs; Detectors; Dielectrics; Manufacturing processes; Planarization; Rough surfaces; Slurries; Surface roughness; Vibrations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
0-7803-7392-8
Type :
conf
DOI :
10.1109/ISSM.2000.993637
Filename :
993637
Link To Document :
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