Title :
Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities
Author :
Piner, E.L. ; Singhal, S. ; Rajagopal, P. ; Therrien, R. ; Roberts, J.C. ; Li, T. ; Hanson, A.W. ; Johnson, J.W. ; Kizilyalli, I.C. ; Linthicum, K.J.
Author_Institution :
Nitronex Corp., Raleigh, NC
Abstract :
AlGaN/GaN HFET devices demonstrate remarkable performance. For commercial acceptance of this technology, long-term device stability must meet stringent industry standards. We review the current status of GaN reliability and contrast it with the requirement for commercial viability. Results analyzing degradation pertaining to buffer leakage and gate diode forward failure is presented
Keywords :
III-V semiconductors; aluminium compounds; failure analysis; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; HFET technology; buffer leakage; device degradation phenomena; gate diode forward failure; heterostructure field effect transistor; long-term device stability; Aluminum gallium nitride; Degradation; Electrons; Failure analysis; Gallium nitride; HEMTs; MODFETs; Radio frequency; Schottky diodes; Stress;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346798
