DocumentCode :
2386710
Title :
Suppression of tungsten irregular growth in W chemical vapor deposition
Author :
Morita, Tomoyuki ; Harada, Yusuke ; Oki, Hisanori ; Onoda, Hiroshi
Author_Institution :
LSI Production Center, Old Electr. Ind. Co. Ltd., Tokyo, Japan
fYear :
2000
fDate :
2000
Firstpage :
169
Lastpage :
172
Abstract :
W irregular growth in low temperature W-CVD processes is a most important problem. We succeeded control of W irregular growth by adjusting the SiH4/WF6 flow ratio, changing of W deposition sequence and adhesion layer annealing in reduction gases at ambient. We describe the control of the W irregular growth in low temperature W-CVD processes and also the mechanism of W irregular growth
Keywords :
CVD coatings; adhesion; annealing; chemical vapour deposition; interconnections; metallisation; nucleation; tungsten; SiH4; SiH4-WF6; SiH4/WF6 flow ratio; TiN; W; W chemical vapor deposition; W deposition sequence; W irregular growth control; WF6; adhesion layer annealing; low temperature W-CVD processes; nucleation; tungsten irregular growth suppression; Annealing; Chemical vapor deposition; Filling; Large scale integration; Optical microscopy; Scanning electron microscopy; Temperature; Tin; Transmission electron microscopy; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
0-7803-7392-8
Type :
conf
DOI :
10.1109/ISSM.2000.993641
Filename :
993641
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2386710
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