Title :
Scaleable low cost CMOS process with gate formation prior to implants
Author :
Kraus, Karl-Heinz ; Schwartz, Wolfgang
Author_Institution :
Texas Instruments, Freising, Germany
Abstract :
It is very common that CMOS wafer fabs have distinct process solutions simultaneously in production for several technology generations. This adds complexity to manufacturing logistics, machine utilization and quality assurance. We have developed a scaleable CMOS modular platform that covers supply voltages of 1.8, 2.5, 3.3 and 5.0 Volt by adjusting only a few process parameters. Ninety percent of the process steps are common. This new CMOS process scheme can be modified to meet analog requirements, i.e. for radio frequency (RF) system applications
Keywords :
CMOS analogue integrated circuits; integrated circuit manufacture; process control; 1.8 V; 2.5 V; 3.3 V; 5.0 V; CMOS process scheme; CMOS wafer fabs; gate formation; low cost CMOS process; machine utilization; manufacturing logistics; process parameters; quality assurance; radio frequency system applications; scaleable CMOS modular platform; supply voltages; CMOS process; CMOS technology; Costs; Implants; Instruments; MOS devices; Manufacturing; Production; Radio frequency; Voltage;
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
0-7803-7392-8
DOI :
10.1109/ISSM.2000.993642
