Title :
High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers
Author :
Moon, J.S. ; Wong, D. ; Antcliffe, M. ; Hashimoto, P. ; Hu, M. ; Willadsen, P. ; Micovic, M. ; Moyer, H.P. ; Kurdoghlian, A. ; Macdonald, P. ; Wetzel, M. ; Bowen, R.
Author_Institution :
HRL Labs. LLC, Malibu, CA
Abstract :
This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; MMIC power density; PAE; X-band MMIC amplifiers; Aluminum gallium nitride; Density measurement; Gain; Gallium nitride; HEMTs; MMICs; MODFETs; Moon; Power generation; Power measurement;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346801
