Title :
Totally Silicided (TOSI) Gates as an evolutionary metal gate solution for advanced CMOS technologies
Author :
Müller, M. ; Mondot, A. ; Aime, D. ; Gierczynski, N. ; Ribes, G. ; Skotnicki, T.
Author_Institution :
Philips Semicond., Crolles
Abstract :
In this paper, we show that totally silicided (TOSI) gate electrodes offer an interesting and industrially viable option for the integration of metal gate electrodes in advanced CMOS technologies as their integration requires only few modifications with respect to a CMOS standard flow. Moreover, the use of NiSi gives access to an electrode with a tunable mid-gap work function. The potential of TOSI-gate devices is demonstrated by integration and device results including fully operational SRAM cells and reliability data
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit metallisation; nickel alloys; semiconductor-metal boundaries; silicon alloys; work function; NiSi; SRAM cells; advanced CMOS technologies; metal gate electrodes; totally silicided gates; tunable work function; CMOS technology; Electrodes; Impurities; Inorganic materials; MOS devices; Photonic band gap; Semiconductor materials; Silicidation; Silicides; Threshold voltage;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220816
