Totally Silicided (TOSI) Gates as an evolutionary metal gate solution for advanced CMOS technologies

Author

Müller, M. ; Mondot, A. ; Aime, D. ; Gierczynski, N. ; Ribes, G. ; Skotnicki, T.

Author_Institution

Philips Semicond., Crolles

fYear

0

fDate

0-0 0

Firstpage

1

Lastpage

6

Abstract

In this paper, we show that totally silicided (TOSI) gate electrodes offer an interesting and industrially viable option for the integration of metal gate electrodes in advanced CMOS technologies as their integration requires only few modifications with respect to a CMOS standard flow. Moreover, the use of NiSi gives access to an electrode with a tunable mid-gap work function. The potential of TOSI-gate devices is demonstrated by integration and device results including fully operational SRAM cells and reliability data

Keywords

CMOS integrated circuits; SRAM chips; integrated circuit metallisation; nickel alloys; semiconductor-metal boundaries; silicon alloys; work function; NiSi; SRAM cells; advanced CMOS technologies; metal gate electrodes; totally silicided gates; tunable work function; CMOS technology; Electrodes; Impurities; Inorganic materials; MOS devices; Photonic band gap; Semiconductor materials; Silicidation; Silicides; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on

Conference_Location

Padova

Print_ISBN

1-4244-0097-X

Type

conf

DOI

10.1109/ICICDT.2006.220816

Filename

1669403