Title :
Mobility-Enhanced CMOS Technologies Using Strained Si/SiGe/Ge Channels
Author :
Takagi, Takagi ; Tezuka, T. ; Irisawa, T. ; Nakaharai, S. ; Numata, T. ; Usuda, K. ; Maeda, T. ; Sugiyama, N.
Author_Institution :
MIRAI-AIST, Kawasaki
Abstract :
It has been well recognized that continuous increase in drive current is mandatory for successive growth of future CMOS LSIs. This means that the mobility enhancement has to keep being pursued in each technology node. For this purpose, a variety of local strain and global strain techniques have recently been developed and some of them have already been implemented in real products as presented in T. Ghani et al. (2003). This paper reports our recent approaches on the development of mobility-enhanced device structures based on the global strain substrates
Keywords :
CMOS integrated circuits; Ge-Si alloys; germanium; hole mobility; large scale integration; nanotechnology; silicon; substrates; CMOS LSI; Si-SiGe-Ge; global strain substrates; global strain technique; local strain technique; mobility enhancement; strained channels; CMOS technology; Capacitive sensors; Compressive stress; Electron mobility; Fabrication; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Silicon on insulator technology; Uniaxial strain;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220817
