Title :
Mobility and Strain Effects on <110>/(110) SiGe channel pMOSFETs for High Current Enhancement
Author :
Pan, J.W. ; Liu, P.W. ; Chang, T.Y. ; Chiang, W.T. ; Tsai, C.H. ; Lin, Y.H. ; Tsai, C.T. ; Ma, G.H. ; Chien, S.C. ; Sun, S.W.
Author_Institution :
Central R&D Div., United Microelectron. Corp., Hsin-Chu
Abstract :
Mobility and strain mechanisms of SiGe channel pMOSFETs fabricated with <110> channel direction on (110) Si substrate (<110>/(110) SiGe channel) have been studied in details for the first time. The combination of substrate orientation, high mobility channel material and extrinsic stained-Si process demonstrates the ultra high mobility enhancement and results in 80% current gain. The piezoresistance coefficients of <110>/(110) SiGe channel p-MOSFETs were also studied to analyze the strain effect on current enhancement. We also compared the derived piezoresistance coefficients results of SiGe channel on (100) and (110) surfaces
Keywords :
Ge-Si alloys; MOSFET; piezoresistance; SiGe; extrinsic stained-Si process; high current enhancement; high mobility channel material; pMOSFET; piezoresistance coefficients; strain effect; substrate orientation; ultra high mobility enhancement; Capacitive sensors; Compressive stress; Germanium silicon alloys; MOSFETs; Piezoresistance; Piezoresistive devices; Silicon germanium; Substrates; Sun; Tensile stress;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346812
