• DocumentCode
    2386958
  • Title

    Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure

  • Author

    Donaton, Ricardo A. ; Chidambarrao, Dureseti ; Johnson, Jeff ; Chang, Paul ; Liu, Yaocheng ; Henson, W. Kirklen ; Holt, Judson ; Li, Xi ; Li, Jinghong ; Domenicucci, Anthony ; Madan, Anita ; Rim, Ken ; Wann, Clement

  • Author_Institution
    Semicond. R&D Center, IBM Syst. & Technol. Group, Hopewell Junction, NY
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain
  • Keywords
    Ge-Si alloys; MOSFET; stress-strain relations; MOSFET; SiGe; elastic relaxation/strain; mobility enhancement; reverse embedded SiGe structure; tensile strain; uniaxial tensile stress; Capacitive sensors; Fabrication; Germanium silicon alloys; MOSFET circuits; Research and development; Silicon compounds; Silicon germanium; Tensile strain; Tensile stress; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0439-8
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346813
  • Filename
    4154232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2386958