Title :
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis
Author :
Gusmeroli, R. ; Compagnoni, C. Monzio ; Riva, A. ; Spinelli, A.S. ; Lacaita, A.L. ; Bonanomi, M. ; Visconti, A.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano
Abstract :
We investigate the properties of traps in the SiO2 by means of a statistical analysis of random telegraph noise in Flash memory arrays. We develop a new physical model for the statistical superposition of the elementary Markov processes describing traps occupancy, able to explain the experimental evidence for cell threshold voltage instability. Comparing modeling results with experimental data allowed the estimation of the energy and space distribution of oxide defects
Keywords :
Markov processes; crystal defects; semiconductor device noise; silicon compounds; statistical analysis; SiO2; cell threshold voltage instability; defects spectroscopy; elementary Markov processes; statistical random telegraph noise analysis; statistical superposition; Data mining; Electron traps; Flash memory; Flash memory cells; Markov processes; Nonvolatile memory; Spectroscopy; Statistical analysis; Telegraphy; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346819
