Title :
Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory
Author :
Gu, S.H. ; Li, C.W. ; Wang, Tahui ; Lu, W.P. ; Chen, K.C. ; Ku, Joseph ; Lu, Chih-Yuan
Author_Institution :
Macronix Int. Co. Ltd., Hsin-Chu
Abstract :
Program/erase cycling stress induced read current fluctuations arising from random telegraph noise (RTN) in a localized storage, multi-level nitride flash memory (SONOS) is explored. Our study shows that localized charge storage significantly enhances RTN. The amplitude of RTN varies in different program levels of a multi-level cell. The broadening of read current distribution due to RTN is characterized and modeled. Improvement of bottom oxide robustness can reduce the read current fluctuations
Keywords :
charge storage diodes; flash memories; semiconductor device noise; localized charge storage; multilevel SONOS flash memory; random telegraph noise; read current instability; CMOS technology; Current measurement; Electronics industry; Flash memory; Fluctuations; Industrial electronics; SONOS devices; Sampling methods; Stress; Telegraphy;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346820
