Title :
A Low-Voltage Process Corner Insensitive Subthreshold CMOS Voltage Reference Circuit
Author :
Lin, Hongchin ; Chang, Dern-Koan
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung
Abstract :
A reference voltage circuit is presented for generating a constant reference voltage of 278mV using subthreshold characteristics of 0.18mum CMOS technology at supply voltages from 0.8V to 2.6V with total current of 3.6muA. The threshold voltage variation due to process corner variation is minimized by a threshold voltage tracking technique between the normal and high threshold NMOS transistors. In the mean time, channel-length modulation effect is also compensated. The proposed circuit on chip area of 0.04mm2 achieves the total reference voltage variation of 2.5mV for various process corners and temperature variation from -20degC to 120degC
Keywords :
CMOS integrated circuits; reference circuits; -20 to 120 C; 0.18 micron; 0.8 to 2.6 V; 278 mV; 3.6 muA; CMOS voltage reference circuit; NMOS transistor; process corner insensitive; reference voltage; threshold voltage tracking; CMOS process; CMOS technology; Character generation; Circuits; Diodes; Fluctuations; MOSFETs; Photonic band gap; Temperature sensors; Threshold voltage;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220833
