A Low-Voltage Process Corner Insensitive Subthreshold CMOS Voltage Reference Circuit

Author

Lin, Hongchin ; Chang, Dern-Koan

Author_Institution

Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung

fYear

0

fDate

0-0 0

Firstpage

1

Lastpage

4

Abstract

A reference voltage circuit is presented for generating a constant reference voltage of 278mV using subthreshold characteristics of 0.18mum CMOS technology at supply voltages from 0.8V to 2.6V with total current of 3.6muA. The threshold voltage variation due to process corner variation is minimized by a threshold voltage tracking technique between the normal and high threshold NMOS transistors. In the mean time, channel-length modulation effect is also compensated. The proposed circuit on chip area of 0.04mm² achieves the total reference voltage variation of 2.5mV for various process corners and temperature variation from -20degC to 120degC

Keywords

CMOS integrated circuits; reference circuits; -20 to 120 C; 0.18 micron; 0.8 to 2.6 V; 278 mV; 3.6 muA; CMOS voltage reference circuit; NMOS transistor; process corner insensitive; reference voltage; threshold voltage tracking; CMOS process; CMOS technology; Character generation; Circuits; Diodes; Fluctuations; MOSFETs; Photonic band gap; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on

Conference_Location

Padova

Print_ISBN

1-4244-0097-X

Type

conf

DOI

10.1109/ICICDT.2006.220833

Filename

1669420