Title :
A Low-Power Fully-Mosfet Voltage Reference Generator for 90 nm CMOS Technology
Author :
Di Naro, G. ; Lombardo, G. ; Paolino, C. ; Lullo, G.
Author_Institution :
Dipt. di Ingegneria Elettrica, Elettronica e delle Telecomunicazioni, Universita di Palermo
Abstract :
An integrated voltage reference generator, designed for being incorporated in standard 90-nm CMOS technology flash memories, is described in this paper. A fully MOSFET based approach, using also subthreshold operated devices, has been adopted in order to achieve low-voltage and low-power requirements and to overcome the difficulties of conventional band-gap reference circuits. The proposed circuit, based on current signals, internally generates two currents with opposite dependence on temperature. The two currents are added, thus canceling almost completely temperature dependence, and then linearly converted into the output voltage. For a temperature variation between -20degC and 90degC, the produced reference voltage shows a stability within 0.7%. The very low current consumption (1.3 muA), together with the possibility of operating at very low supply voltages (around 1V), make the circuit well suitable for applications in low-power low-voltage integrated circuits
Keywords :
CMOS integrated circuits; MOSFET circuits; flash memories; low-power electronics; reference circuits; -20 to 90 C; 1.3 muA; 90 nm; CMOS technology; MOSFET; current signals; flash memory; low-power integrated circuit; low-voltage integrated circuit; voltage reference generator; Application specific integrated circuits; CMOS technology; Circuit stability; Flash memory; Integrated circuit technology; Low voltage; MOSFET circuits; Photonic band gap; Signal generators; Temperature dependence;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220834
