Title :
Single Event Leakage Current in Flash memory
Author :
Cellere, G. ; Larcher, L. ; Paccagnella, Alessandro ; Visconti, A. ; Bonanomi, M.
Author_Institution :
DEI, Universita di Padova
Abstract :
Flash memories are the leader among nonvolatile memory technologies. Ionizing radiation impact their reliability both on the control circuitry and on the memory array itself. In particular, in FGs hit by ions the tracks of defects generated by ions in the tunnel oxide may result in a radiation induced leakage current (RILC), which can leads to retention problems in hit FGs. We are demonstrating and modeling this phenomenon in a state-of-the-art Floating Gate memory technology. We are also showing that RILC has a peculiar erratic behavior
Keywords :
flash memories; leakage currents; random-access storage; RILC; control circuitry; erratic behavior; flash memory; floating gate memory; ionizing radiation; memory array; nonvolatile memory technologies; radiation induced leakage current; single event; Aerospace electronics; Circuits; Electrons; Flash memory; Ionizing radiation; Leakage current; Neutrons; Nonvolatile memory; Protons; Stress;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220837
