• DocumentCode
    2387325
  • Title

    High controllability and low cost APM process by one-bath type wet-bench for multi gate oxide pre-cleaning

  • Author

    Suzuki, Tatsuya ; Kunishima, Hiroyuki ; Wake, Tomoko ; Chikaki, Shinichi

  • Author_Institution
    ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    321
  • Lastpage
    324
  • Abstract
    We propose a sufficiently effective APM process by one-bath type wet-bench to the multi oxide gate precleaning from the viewpoint of the high controllable thermal oxide etching rate and the high performance pre-cleaning for ultra-thin gate oxide. In the one-bath type wet-bench, cleaning solution is freshly changed per batch. Therefore, we estimated the ability of the cost reduction of the APM process. As the result, it was clarified that the composition of 0.1:0.1:5 (NH4OH:H2O2:H2O) in the one-bath type wet-bench is almost equivalent cost level to the conventional multi-bath type wet-bench and can realize the high controllability and performance for the pre-cleaning of multi gate oxide.
  • Keywords
    CMOS integrated circuits; controllability; etching; process control; semiconductor process modelling; surface cleaning; CMOS; NH4OH-H2O2-H2O; cost reduction; high controllability; low cost APM process; multigate oxide precleaning; one-bath type wet-bench; thermal oxide etching rate; Chemicals; Cleaning; Controllability; Costs; Fabrication; National electric code; Oxidation; Ultra large scale integration; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7392-8
  • Type

    conf

  • DOI
    10.1109/ISSM.2000.993678
  • Filename
    993678